STP60NF10 |
RFQ for STP60NF10 |
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| Technical/Catalog Information | STP60NF10 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 4270pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 104nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP60NF10 STP60NF10 497 4384 5 ND 49743845ND 497-4384-5 |
| Product | Manufacturers | Pack | D/C |
| STP60NF10 | - | TO 220 AB NON ISOL | `06+(pb-free) |
This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Typical Application |
Features |
| HIGH EFFICIENCY DC/DC CONVERTERS, INDUSTRIAL, AND LIGHTING EQUIPMENT. MOTOR CONTROL | TYPICAL RDS(on) = 0.019 Ω EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") |
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Symbol |
Parameter |
Value |
Unit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VDGR |
Drain- gate Voltage (RGS = 20k) |
100 |
V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
VGS |
Gate-source Voltage |
±20 |
V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ID(*) |
Drain Current (continuous) at Tc = 25 oC |
80 |
A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
ID |
Drain Current (continuous) at Tc = 100 oC |
66 |
A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDM(•) |
Drain Current (pulsed) |
320 |
A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Ptot |
Total Dissipation at Tc = 25 oC |
300 |
W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Derating Factor |
2 |
W/oC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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dv/dt (1) |
Peak Diode Recovery voltage slope |
16 |
V/ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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